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| ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 S1 S4 G4 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Single SM-8 Surface Mount Package G1 D1, D2 D3, D4 APPLICATIONS * Single Phase DC Fan Motor Drive G2 S2 S3 G3 ORDERING INFORMATION DEVICE ZXMHC10A07T8TA ZXMHC10A07T8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units PINOUT DEVICE MARKING * ZXMH C10A7 ISSUE 2 - JUNE 2005 1 SEMICONDUCTORS ZXMHC10A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V GS =10V; T A =25C (b) (d) @ V GS =10V; T A =70C (b) (d) @ V GS =10V; T A =25C (a) (d) Pulsed Drain Current (c) SYMBOL V DSS V GS ID N-channel 100 20 1.1 0.9 1.0 P-channel -100 20 -0.9 -0.8 -0.8 -4.5 -2.2 -4.5 1.3 UNIT V V A A A A A A W mW/C W mW/C C I DM IS I SM PD PD T j , T stg 5.2 2.3 5.2 10.4 1.3 10.4 Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) (d) Linear Derating Factor Power Dissipation at T A =25C Linear Derating Factor Operating and Storage Temperature Range (b) (d) -55 to +150 THERMAL RESISTANCE PARAMETER Junction to Ambient (a) (d) SYMBOL R JA R JA VALUE 94.5 73.3 UNIT C/W C/W Junction to Ambient (b) (d) NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions, with the heat sink split into two equal areas one for each drain connection. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D= 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature. Refer to transiennt thermal impedance graph. (d) For device with one active die. ISSUE 2 - JUNE 2005 SEMICONDUCTORS 2 ZXMHC10A07T8 TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 3 SEMICONDUCTORS ZXMHC10A07T8 N-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1) (3) DYNAMIC (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Q gs Q gd V SD t rr Q rr 100 1 100 2.0 4.0 0.7 0.9 1.6 V A nA V I D = 250 A, V GS =0V V DS =100V, V GS =0V V GS =20V, V DS =0V I D = 250 A, V DS =V GS V GS = 10V, I D = 1.5A V GS = 6V, I D = 1.0A S V DS = 15V, I D = 1.0A Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 138 12 6 pF pF pF V DS = 60V, V GS =0V f=1MHz 1.8 1.5 4.1 2.1 2.9 0.7 1.0 ns ns ns ns nC nC nC V DS = 50V, V GS = 10V I D = 1.0A V DD = 50V, I D = 1.0A R G 6.0 , V GS = 10V 0.95 27 12 V ns nC T j =25C, I S = 1.5A, V GS =0V T j =25C, I S = 1.8A, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JUNE 2005 SEMICONDUCTORS 4 ZXMHC10A07T8 P-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1) (3) DYNAMIC (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr -100 -1.0 100 -2.0 -4.0 1 1.45 1.2 V A nA V I D = -250 A, V GS =0V V DS = -100V, V GS =0V V GS =20V, V DS =0V I D = -250 A, V DS =V GS V GS = -10V, I D = - 0.6A V GS = -6V, I D = -0.5A S V DS = -15V, I D = -0.6A Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 141 13.1 10.8 pF pF pF V DS = -50V, V GS =0V f=1MHz 1.6 2.1 5.9 3.3 1.6 3.5 0.6 1.6 ns ns ns ns nC nC nC nC V DS = -50V, V GS = -5V I D = -0.6A V DS = -50V, V GS = -10V I D = -0.6A V DD = -50V, I D = -1A R G 6.0 , V GS = -10V -0.85 29 31 -0.95 V ns nC T j =25C, I S = -0.75A, V GS =0V T j =25C, I S = -0.9A, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JUNE 2005 5 SEMICONDUCTORS ZXMHC10A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 SEMICONDUCTORS 6 ZXMHC10A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 7 SEMICONDUCTORS ZXMHC10A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 SEMICONDUCTORS 8 ZXMHC10A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - JUNE 2005 9 SEMICONDUCTORS ZXMHC10A07T8 PACKAGE OUTLINE PACKAGE DIMENSIONS DIM Millimetres MIN A A1 b c D E e1 e2 He Lp - 0.02 - 0.24 6.3 3.3 - - 6.7 0.9 - - TYP MAX - - 0.7 - - - 4.59 1.53 - - - 10 1.7 0.1 - 0.32 6.7 3.7 - - 7.3 - 15 - MIN - 0.0008 - 0.009 0.248 0.130 - - 0.264 0.035 - - Inches TYP - - 0.028 - - - 0.180 0.060 - - - 10 MAX 0.067 0.004 - 0.013 0.264 0.145 - - 0.287 - 15 - Controlling dimensions are in millimetres. Approximate conversions are given in inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JUNE 2005 SEMICONDUCTORS 10 |
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